Multiphysics coupled plasma simulation of MPCVD diamond single crystal growth

Xinyi Jiang; Liwei Deng

doi:10.1117/12.2627629

11 March 2022 Multiphysics coupled plasma simulation of MPCVD diamond single crystal growth

Xinyi Jiang, Liwei Deng

Proceedings Volume 12160, International Conference on Computational Modeling, Simulation, and Data Analysis (CMSDA 2021); 121601I (2022) https://doi.org/10.1117/12.2627629
Event: International Conference on Computational Modeling, Simulation, and Data Analysis (CMSDA 2021), 2021, Sanya, China

Abstract

In this paper, the finite element simulation method is used to conduct a numerical study on the characteristics of microwave plasma chemical vapor deposition (MPCVD) and hydrogen plasma discharge. The multi-physics coupling of electromagnetic field and plasma field in MPCVD chamber is established in COMSOL. And corresponding twodimensional model is also built combing finite element high-frequency Maxwell solver, drift diffusion solver and heat transfer solver. The characteristics of plasma deduced from different deposition platform designs are analyzed. Our simulations reveal that even minor structure modifications of the deposition platform greatly change the distribution of electron density, thereby affecting the growth of homoepitaxial and polycrystalline. And thus deposition platform design, including its shape and dimension, is fundamentally important in crystal growth process.

Citation Download Citation

Xinyi Jiang and Liwei Deng "Multiphysics coupled plasma simulation of MPCVD diamond single crystal growth", Proc. SPIE 12160, International Conference on Computational Modeling, Simulation, and Data Analysis (CMSDA 2021), 121601I (11 March 2022); https://doi.org/10.1117/12.2627629

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