Investigation of H+ beam radiation on photoelectric performance of GaAs photocathodes

Kaimin Zhang; Yijun Zhang; Jingzhi Zhang; Shiman Li; Yunsheng Qian; Gangcheng Jiao; Feng Shi; Hongchang Chen; Jinliang Du

doi:10.1117/12.2616828

15 February 2022 Investigation of H⁺ beam radiation on photoelectric performance of GaAs photocathodes

Kaimin Zhang, Yijun Zhang, Jingzhi Zhang, Shiman Li, Yunsheng Qian, Gangcheng Jiao, Feng Shi, Hongchang Chen, Jinliang Du

Author Affiliations +

Proceedings Volume 12166, Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021); 121663L (2022) https://doi.org/10.1117/12.2616828
Event: Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021), 2021, Hong Kong, Hong Kong

Abstract

In order to research H⁺ beam radiation on photoelectric performance of GaAs photocathodes used in low-light-level optoelectronic devices, based on Monte-Carlo method, quick calculation of damage, along with effects of Cs and Cs-O activation layer on ion trajectory, performance, ionization of ions and recoils are discussed. From the simulation results, the average stopping range increases with the increase of incident energy, and the dispersion varies with the incident angle, the minimum dispersion at 1 keV is obtained at 60° when Cs-O ratio is 2:1, and the minimum dispersion at 2 keV is obtained at 60° when Cs-O ratio is also 2:1. In addition, the produced vacancies increase with the incident energy while the value is almost not influenced by the incident angle, and the backscattered ions increase as the incident angle increase both in 1 keV and 2 keV cases, and decrease with the incident energy. Also, ionization dominate the H⁺ ion bombarding process instead of producing vacancies and phonons. With the increase of incident energy, the percentage of ionization of ions increases, while those of phonons of ions and ionization of recoils decrease. However, the corresponding percentages of ions and recoils remain nearly unchanged with the increase of incident angle and the variation of composition of Cs or Cs-O activation layer.

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Kaimin Zhang, Yijun Zhang, Jingzhi Zhang, Shiman Li, Yunsheng Qian, Gangcheng Jiao, Feng Shi, Hongchang Chen, and Jinliang Du "Investigation of H⁺ beam radiation on photoelectric performance of GaAs photocathodes", Proc. SPIE 12166, Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021), 121663L (15 February 2022); https://doi.org/10.1117/12.2616828

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KEYWORDS

Ions

Gallium arsenide

Chemical species

Cesium

Ionization

Phonons

Monte Carlo methods

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