Electronic transport in infrared detector materials based on InAs/InGaSb type-II superlattices (Conference Presentation)

Gilberto A. Umana-Membreno; Nima Dehdashtiakhavan; Jarek Antoszewski; Lorenzo Faraone

doi:10.1117/12.2656306

2 November 2022 Electronic transport in infrared detector materials based on InAs/InGaSb type-II superlattices (Conference Presentation)

Gilberto A. Umana-Membreno, Nima Dehdashtiakhavan, Jarek Antoszewski, Lorenzo Faraone

Author Affiliations +

Proceedings Volume 12271, Electro-optical and Infrared Systems: Technology and Applications XIX; 1227104 (2022) https://doi.org/10.1117/12.2656306
Event: SPIE Security + Defence, 2022, Berlin, Germany

Abstract

Type-II superlattice (T2SL) based semiconductors have emerged as a rival to well-established HgCdTe-based IR detectors, promising comparable performance at significantly lower cost. T2SLs are complex nanostructures that exhibit multiple-carrier and highly-anisotropic electronic transport properties, which renders them exceedingly challenging to study experimentally. The lack of reliable experimental data has limited optimisation and modelling efforts, and thus hampered progress. This paper will present a systematic experimental study of electronic transport in InAs/InGaSb T2SLs, by employing world-leading mobility spectrum techniques developed at UWA and state-of-the art T2SL structures from three leading research groups developing infrared detector technologies based on T2SLs.

Conference Presentation

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Gilberto A. Umana-Membreno, Nima Dehdashtiakhavan, Jarek Antoszewski, and Lorenzo Faraone "Electronic transport in infrared detector materials based on InAs/InGaSb type-II superlattices (Conference Presentation)", Proc. SPIE 12271, Electro-optical and Infrared Systems: Technology and Applications XIX, 1227104 (2 November 2022); https://doi.org/10.1117/12.2656306

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