Effect of surface free energy of organic underlayer on dissolution kinetics of poly(4-hydroxystyrene) film in tetramethylammonium hydroxide aqueous developer

Yuqing Jin; Tomoe Otsuka; Naoki Tanaka; Takahiro Kozawa

doi:10.1117/12.2642503

1 December 2022 Effect of surface free energy of organic underlayer on dissolution kinetics of poly(4-hydroxystyrene) film in tetramethylammonium hydroxide aqueous developer

Yuqing Jin, Tomoe Otsuka, Naoki Tanaka, Takahiro Kozawa

Author Affiliations +

Proceedings Volume 12292, International Conference on Extreme Ultraviolet Lithography 2022; 1229207 (2022) https://doi.org/10.1117/12.2642503
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

Understanding the interaction of resist materials with the underlayers is important for the development of highly resolving resist materials. The effect of the surface free energy of the organic underlayer on the dissolution kinetics of poly(4-hydroxystyrene) (PHS) film in a tetramethylammonium hydroxide (TMAH) aqueous developer was investigated by the quartz crystal microbalance (QCM) method. By using 0.95 wt% TMAH standard developer, we observed the correlation between the polar component of the surface free energy of the underlayer and the interaction area of the QCM chart (impedance) near the end of PHS dissolution. The interaction area was defined by the product of impedance change and time. The interaction of the hydroxyl groups of PHS with the underlayer increased with the polar component of the surface free energy of the underlayer. The analytical method developed in this study is useful for the investigation of the resist-underlayer interaction during development.

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Citation Download Citation

Yuqing Jin, Tomoe Otsuka, Naoki Tanaka, and Takahiro Kozawa "Effect of surface free energy of organic underlayer on dissolution kinetics of poly(4-hydroxystyrene) film in tetramethylammonium hydroxide aqueous developer", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 1229207 (1 December 2022); https://doi.org/10.1117/12.2642503

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