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14 March 2023 760nm laser bars for aesthetic applications
A. Pietrzak, M. Zorn, R. Huelsewede, J. Meusel, S. Seidel
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Proceedings Volume 12403, High-Power Diode Laser Technology XXI; 124030F (2023) https://doi.org/10.1117/12.2648214
Event: SPIE LASE, 2023, San Francisco, California, United States
Abstract
Recently developed high-power high-efficiency laser bars emitting at 760 nm for aesthetic applications such as hair removal will be introduced. During the development procedure different laser structures utilizing ternary and quaternary active regions, resulting in TE and TM polarized light, embedded in AlxGa1-xAs wave-guiding material were grown by means of MOVPE/MOCVD. The limits of the developed structures processed into laser bars with 1.5 mm cavity length and 50% fill-factor were investigated experimentally. The developed laser bars operate at 90 W (CW operation) and 250 W (pulsed operation) with more than 60% electro-optical efficiency, hence comparable to efficiency and output power of our 808 nm laser bars. Moreover, a reliable CW operation at 80 W for more than 9800 h as well as 40 Mshots at 90 A (long pulse operation at 70°C junction temperature) are already verified. The power-current characteristics as well as results of the lifetime tests at different junction temperatures and current density levels will be presented. The failure mechanisms will be discussed shortly.
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A. Pietrzak, M. Zorn, R. Huelsewede, J. Meusel, and S. Seidel "760nm laser bars for aesthetic applications", Proc. SPIE 12403, High-Power Diode Laser Technology XXI, 124030F (14 March 2023); https://doi.org/10.1117/12.2648214
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KEYWORDS
Laser bars
Quantum wells
Laser development
Semiconductor lasers
Pulsed laser operation
Surgery
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