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Semiconductors are amongst the most efficient active laser media as they yield extreme wall-plug efficiencies. Their broad gain bandwidth also promise short-pulse operation. Yet, intrinsic charge-carrier relaxation dynamics limit the feasible repetition rates beyond constraints of cavity design and heat removal. In lieu of studying an operation device we monitor the population dynamics, i.e., the initial buildup of gain after optical excitation as well as its recovery after a stimulated emission process using multiple pump-probe spectroscopy. The first optical pulse injects hot charge carriers that eventually build up spectral gain in the sample. The energies are chosen such to mimic typical electrical injection surplus energies. Subsequently, a second laser pulse tuned to the broad spectral region in which gain is observed is used to stimulate emission and thus eliminate the gain. Analysis of the absorption spectra after stimulated emission reveals gain recovery times in the picosecond regime.
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Felix Schäfer, Janine Lorenz, Markus Stein, Christian Fuchs, Kerstin Volz, Sangam Chatterjee, "Multiple pump-probe experiments reveal the ultrafast gain recovery in model active semiconductor media," Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241504 (10 March 2023); https://doi.org/10.1117/12.2650335