Theoretical study of impacts of traps on optical response of side-coupled InGaAs waveguide photodetectors

Qian Ding; Andreas Schenk

doi:10.1117/12.2649950

10 March 2023 Theoretical study of impacts of traps on optical response of side-coupled InGaAs waveguide photodetectors

Qian Ding, Andreas Schenk

Proceedings Volume 12415, Physics and Simulation of Optoelectronic Devices XXXI; 1241508 (2023) https://doi.org/10.1117/12.2649950
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

We study the impact of hole traps on the optical response of Si waveguide-coupled p-i-n In_0.53Ga_0.47As photodetectors. Compared with the ideal case, a trap density of 1e14 cm^-2eV^-1 at the In0.53Ga0.47As/SiO₂ interface reduces the device’s quantum efficiency by about 10% and its cut-off frequency by a factor of 2. The drop of the quantum efficiency is mainly caused by interface traps at heavily doped regions, whereas the cut-off frequency degrades due to interface traps at the i-region. Hole traps at the In_0.53Ga_0.47As/Si interface, however, have no effect on the quantum efficiency - only the cut-off frequency drops with increasing trap concentration. Similar impacts of such traps are observed in plasmonic waveguide-coupled photodetectors with a metal strip placed on top of the i-region.

Citation Download Citation

Qian Ding and Andreas Schenk "Theoretical study of impacts of traps on optical response of side-coupled InGaAs waveguide photodetectors", Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241508 (10 March 2023); https://doi.org/10.1117/12.2649950

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