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13 March 2023 Design of infrared phototransistors based on silicon feedback field effect transistors
Jayoung Kim, Jinyoung Hwang
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Proceedings Volume 12426, Silicon Photonics XVIII; 124260Q (2023) https://doi.org/10.1117/12.2649742
Event: SPIE OPTO, 2023, San Francisco, California, United States
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Abstract
An IR phototransistor is developed based on a feedback field effect transistor (FBFET) having a Si-pnpn structure composed of a p-type drain, n-type channel1, p-type channel2, and n-type source. The gate contact is eliminated in the new device, referred to as light-triggered (LT) FBFET, and a SiGe layer replaces the channel2 to absorb IR light. Instead of the bias applied to the gate contact, the open circuit voltage generated by IR absorption in the SiGe layer controls the current flowing from the drain to the source. With a 2-dimensional periodic array of LT-FBFETs, a metasurface having a resonance is constructed, leading to substantial enhancement of IR absorption in the SiGe layer. Owing to the near-zero subthreshold swing, high on/off ratio, and small off current of FBFETs, the LT-FBFET provides high external quantum efficiency and low static power dissipation.
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Jayoung Kim and Jinyoung Hwang "Design of infrared phototransistors based on silicon feedback field effect transistors", Proc. SPIE 12426, Silicon Photonics XVIII, 124260Q (13 March 2023); https://doi.org/10.1117/12.2649742
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KEYWORDS
Silicon
Field effect transistors
Phototransistors
Design and modelling
External quantum efficiency
Light absorption
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