Metal-oxide RRAM with rGO as oxygen exchange layer

Pratheek Gopalakrishnan; Nacer Ibaroudene; Sabyasachi Ganguli; Ajit Roy; Ethan C. Ahn

doi:10.1117/12.2646083

31 January 2023 Metal-oxide RRAM with rGO as oxygen exchange layer

Pratheek Gopalakrishnan, Nacer Ibaroudene, Sabyasachi Ganguli, Ajit Roy, Ethan C. Ahn

Proceedings Volume 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022; 124770I (2023) https://doi.org/10.1117/12.2646083
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2022, Boston, Massachusetts, United States

Abstract

In this work, a novel interface engineering method is proposed to address the relatively large cycle-to-cycle variability of the emerging metal-oxide resistive random access memory (RRAM) device technology. This is achieved by synthesizing the solution-processable graphitic nanosheet (reduced graphene oxide, rGO) with defects of a controllable amount and further integrating it into RRAM as an oxygen exchange layer (OEL). It is demonstrated that rGO-inserted RRAM exhibits reduced cycle-to-cycle variability in the SET switching as compared with one that has a conventional transition metal thin film as OEL. This is best attributed to the fact that our rGO thin film provides nearly the same amount of oxidation-prone atomic sites for each programming cycle. This study is expected to greatly advance the RRAM-based neuromorphic computing by paving a practically viable route to enhance the accuracy of the deep learning model.

Citation Download Citation

Pratheek Gopalakrishnan, Nacer Ibaroudene, Sabyasachi Ganguli, Ajit Roy, and Ethan C. Ahn "Metal-oxide RRAM with rGO as oxygen exchange layer", Proc. SPIE 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 124770I (31 January 2023); https://doi.org/10.1117/12.2646083

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