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25 April 2023 Perturbation to optical polarization by laser-induced ultrasonic waves and its use for semiconductor characterization (Conference Presentation)
Yi He, Hoon Sohn, Zhongqing Su
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Proceedings Volume 12488, Health Monitoring of Structural and Biological Systems XVII; 1248809 (2023) https://doi.org/10.1117/12.2658135
Event: SPIE Smart Structures + Nondestructive Evaluation, 2023, Long Beach, California, United States
Abstract
A pump-probe ultrasonic laser approach is developed for characterizing the anisotropic photoelasticity (AP) which is related to crystal structures of monocrystalline semiconductors (MSs). The approach exploits the perturbation to the polarization of the monochromatic laser beam when the laser beam interacts with the lattice of MSs. The actively generated strains at the microscopic scale (with a magnitude from 10-4 to 10-5) facilitates detailed, quantitative characterization of lattice properties MSs. A multiphysics model is established to interpret experimental observations, affirming there exists distinct orientation-dependence and crystal-structure-related symmetry of the perturbed polarization state, which is related to mechanical, photoelastic and strain-induced optical anisotropies of MSs.
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Yi He, Hoon Sohn, and Zhongqing Su "Perturbation to optical polarization by laser-induced ultrasonic waves and its use for semiconductor characterization (Conference Presentation)", Proc. SPIE 12488, Health Monitoring of Structural and Biological Systems XVII, 1248809 (25 April 2023); https://doi.org/10.1117/12.2658135
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KEYWORDS
Ultrasonics
Polarization
Laser optics
Semiconductor characterization
Semiconductor lasers
Laser development
Crystals
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