An on-chip atomic layer deposited waveguide amplifier with broadband net gain

Hao Zhang; Shengyun Zhu; Xiaoyan Zhou; Lin Zhang

doi:10.1117/12.2657026

27 December 2022 An on-chip atomic layer deposited waveguide amplifier with broadband net gain

Hao Zhang, Shengyun Zhu, Xiaoyan Zhou, Lin Zhang

Proceedings Volume 12504, International Symposium on Silicon-based Optoelectronics (ISSBO 2022); 125040B (2022) https://doi.org/10.1117/12.2657026
Event: International Symposium on Silicon-based Optoelectronics (ISSBO 2022), 2022, Hangzou, China

Abstract

We demonstrate an erbium-doped aluminum oxide waveguide amplifier with broadband net gain. The atomic layer deposition technique is used to grow the Er³⁺:Al₂O₃. The layer-by-layer deposition allows to tailor the vertical distribution of erbium ions, by which we can change the concentration of erbium ions and prevent the clustering. We characterize the Er³⁺:Al₂O₃ film using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and photoluminescence measurements. Afterwards, on-chip Er³⁺:Al₂O₃ waveguide amplifiers are fabricated. Signal enhancements of 9.6 ± 0.8 dB and 3.5 ± 0.2 dB are achieved at 1532 nm and 1550 nm, respectively, corresponding to a net gain of 4.6 ± 0.4 dB at 1532 nm. We also measure net gain at different signal wavelengths and obtain net gain from 1525 nm to 1580 nm, covering the whole C-band.

Citation Download Citation

Hao Zhang, Shengyun Zhu, Xiaoyan Zhou, and Lin Zhang "An on-chip atomic layer deposited waveguide amplifier with broadband net gain", Proc. SPIE 12504, International Symposium on Silicon-based Optoelectronics (ISSBO 2022), 125040B (27 December 2022); https://doi.org/10.1117/12.2657026

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