Xerographic dark discharge of a-Si:H(p)/a-Si:H(i)/a-Si1-x Cx:H photoreceptors

M. Baxendale; S. Biswas; C. Juhasz

doi:10.1117/12.19816

1 July 1990 Xerographic dark discharge of a-Si:H(p)/a-Si:H(i)/a-Si_1-x C_x:H photoreceptors

M. Baxendale, S. Biswas, C. Juhasz

Proceedings Volume 1253, Hard Copy and Printing Materials, Media, and Processes; (1990) https://doi.org/10.1117/12.19816
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States

Abstract

There has been much interest recently in hydrogenated amorphous silicon-based photoreceptors. The conventional configuration has become a diode-like semiconductor structure with an insulator overcoat layer operated in reverse bias. We have investigated the electric field and temperature dependence of the xerographic dark discharge of a corona or capacitively charged a-Si :H photoreceptor of configuration Al/a-Si:H(p)/a-Si:H(i)/a-5i1 _xCx:H . The band gap mismatch at the semicondutor/insulator interface appears as an energy barrier in the conduction band only. The role of this energy barrier in the dark discharge mechanism has been investigated by us. With a high initial field charging regime thermal generation within the intrinsic region was identified as the rate-limiting process. The zero-field energy barrier for thermal emission is measured to be 0.94 eV. These observations are in agreement with other workers, but previously reported anomalous temperature-dependent high-field behaviour was not observed. An apparent bulk controlled negative differential resistance (NDR) was found by us to control the discharge in the low-initial field regime. A NDR has been observed previously in the d.c characteristic of these devices where an increasing bias was applied step-wise. The observation of a similar NDR in the xerographic discharge mode is somewhat surprising.

Citation Download Citation

M. Baxendale, S. Biswas, and C. Juhasz "Xerographic dark discharge of a-Si:H(p)/a-Si:H(i)/a-Si_1-x C_x:H photoreceptors", Proc. SPIE 1253, Hard Copy and Printing Materials, Media, and Processes, (1 July 1990); https://doi.org/10.1117/12.19816

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KEYWORDS

Silicon

Capacitance

Interfaces

Temperature metrology

Electrons

Materials processing

Printing

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