Toward selective transfer of CVD monolayer WS2 based on laser-cutting dedicated FET applications

Chang Cao; YingMin Qu; Mohamed Bahri; Douadji lyes; DeQiang Wang

doi:10.1117/12.2668065

20 April 2023 Toward selective transfer of CVD monolayer WS₂ based on laser-cutting dedicated FET applications

Chang Cao, YingMin Qu, Mohamed Bahri, Douadji lyes, DeQiang Wang

Proceedings Volume 12602, International Conference on Electronic Information Engineering and Computer Science (EIECS 2022); 126021L (2023) https://doi.org/10.1117/12.2668065
Event: International Conference on Electronic Information Engineering and Computer Science (EIECS 2022), 2022, Changchun, China

Abstract

To date, the thin tungsten disulfide (WS₂) with its tunable band gap structure has renewed increasing attention in microelectronic design owing to its favorable electronic and optoelectronic properties. Chemical vapor deposition (CVD) as a bottom-up growth method of WS₂ is well known for its compatibility with the mature integrated circuit technology (CMOS), making it the most promising method to synthesize large-area and high-quality WS₂ crystals and uplift its integration into microelectronic applications-based field-effect transistor (FET). However, ultra-clean transfer of CVD-grown monolayer tungsten disulfide (WS₂) using polymer-assisted transfer with defect-free is still crucial for large-area WS₂devices' high performance. Additionally, the inhomogeneous distribution of the CVD-grown WS₂ drastically hampers the widespread usage of WS₂-based FET applications due to the alignment difficulty during the FET microfabrication. In this work, we present a new transfer insight of CVD grown WS₂ toward selective transfer and single chip multiple usages based on laser-cutting and conventional PMMA wet etching transfer. The transferred WS₂ surface structure and morphology were well characterized using optical microscopy, PL, Raman spectroscopy, and AFM, confirming the ultraclean and crackles of the transferred WS₂ crystals. While the WS₂ FET developed following this strategy led to high carrier mobility and on/off ratio of 71 cm²/Vs and 10⁵, respectively. The work described in this paper could broaden the CVD synthesis and transfer of WS₂ and their promising microelectronics application-based field-effect transistor.

Citation Download Citation

Chang Cao, YingMin Qu, Mohamed Bahri, Douadji lyes, and DeQiang Wang "Toward selective transfer of CVD monolayer WS₂ based on laser-cutting dedicated FET applications", Proc. SPIE 12602, International Conference on Electronic Information Engineering and Computer Science (EIECS 2022), 126021L (20 April 2023); https://doi.org/10.1117/12.2668065

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KEYWORDS

Chemical vapor deposition

Field effect transistors

Silica

Monolayers

Polymethylmethacrylate

Crystals

Tungsten

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