Charge-up prevention process for e-beam direct writing with multilayer resist

Yoji Tono-oka; Kazuyuki Sakamoto; Toshiyuki Honda; Hiroshi Matsumoto; Yasuo Iida

doi:10.1117/12.20159

1 May 1990 Charge-up prevention process for e-beam direct writing with multilayer resist

Yoji Tono-oka, Kazuyuki Sakamoto, Toshiyuki Honda, Hiroshi Matsumoto, Yasuo Iida

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20159
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

it is essential to avoid charging effects in E-beam direct writing for the fabrication of deep-sub-micron devices. It has been found that a spin-coated surfactant layer over the imaging resist can avoid charging effects. Application of this method to multilayer resist process is presented. With optimum surfactant layer thickness. there is no influence of surfactant layer on resist sensitivity or resolution. The surfactant layer can be removed easily in imaging resist development p r o c e In the case of tn-level resist with a 2.4pm overall thickness. registration error was reduced from I. 0 jim to 0. 1 um( isv. i +26) by adding a 0. l2,um-thick surfactant layer. Quarter micron patterns with good profiles were achieved using CMS-EX(R) as the imaging layer.

Citation Download Citation

Yoji Tono-oka, Kazuyuki Sakamoto, Toshiyuki Honda, Hiroshi Matsumoto, and Yasuo Iida "Charge-up prevention process for e-beam direct writing with multilayer resist", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20159

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