KeV ion-beam-exposed PMIPK and PPIPK

Wen-An Loong; Nien-tsu Peng

doi:10.1117/12.20146

1 May 1990 KeV ion-beam-exposed PMIPK and PPIPK

Wen-An Loong, Nien-tsu Peng

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20146
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The exposure characteristics of polymethyl isopropenylketone(PMIPK) and polyphenyl - isopropenylketone(PPIPK) exposed to 40 and 80 KeV H+ and B+ ion-beam have been studied. It is believed that the electron rich phenyl group in PPIPK has increased stopping power to bigger B ion, but not to smaller H+ ion. Linear relationship is found with simulation parameter A as a function of exposure dose (KeV x ion fluence) for specific ion and polymer within the used energy range. Gel permeation chromatography also indicates that the main chain scissioning of PMIPK is faster than that of PPIPK when they are exposed to B+ under same exposure conditions.

Citation Download Citation

Wen-An Loong and Nien-tsu Peng "KeV ion-beam-exposed PMIPK and PPIPK", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20146

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