Properties of dc-magnetron-sputtered NiSiOx films

Joachim Szczyrbowski; Ralf Faber

doi:10.1117/12.20430

1 August 1990 Properties of dc-magnetron-sputtered NiSiO_x films

Joachim Szczyrbowski, Ralf Faber

Proceedings Volume 1272, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IX; (1990) https://doi.org/10.1117/12.20430
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Transparent and durable thin films of NiSiO were prepared by reactive d.c. magnetron sputtering at room temperature. The target materials used were Si, Ni, NiSi2 and NiSi alloys with 20/80 and 40/60 wt % for nickel and silicon, respectively. With a suitable composition of Ar, N2 and 02 we were able to obtain a stable sputtering process for NiSiO-films without any arcing and flickering. The stable sputtering process formed non-absorbing layers with a deposition rate of 20 A/sec. This is approximately 2 to 3 times higher than the deposition rate for Si02 at the same deposition parameters. The optical transmission and reflection were measured in the wavelength region from 0.28 itm to 2.5 rim. The index of refraction n and the extinction coefficient k were calculated in the same range. The "theoretical" index of refraction was determined by Effective Medium Approximation (ENA).

Citation Download Citation

Joachim Szczyrbowski and Ralf Faber "Properties of dc-magnetron-sputtered NiSiO_x films", Proc. SPIE 1272, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IX, (1 August 1990); https://doi.org/10.1117/12.20430

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