Paper
28 June 2023 A new march test for FinFET memory functional fault detection
Ruikun Wang, Zhihong Huang, Gang Cai, Zhong Yu
Author Affiliations +
Proceedings Volume 12720, 2022 Workshop on Electronics Communication Engineering; 1272007 (2023) https://doi.org/10.1117/12.2668418
Event: 2022 Workshop on Electronics Communication Engineering (WECE 2022), 2022, Xi'an, China
Abstract
FinFET (Fin Field-Effect Transistor) technology is widely used in advanced transistor manufacturing process due to its lower leakage current, smaller short-channel effect, and lower power consumption. However, this special physical structure is very susceptible to manufacturing defects, which makes the FinFET memory prone to functional faults. Therefore, an efficient fault detection method is very important for the defect detection of FinFET memory. A detection algorithm called March FRD for FinFET memory faults is proposed in this paper. This paper summarizes the FinFET functional fault model, analyzes the corresponding coverage conditions, and verifies the correctness of the algorithm. March FRD performs well in detecting resistance dynamic faults, and its total fault coverage reaches 91.7%, which is significantly better than other existing March tests.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ruikun Wang, Zhihong Huang, Gang Cai, and Zhong Yu "A new march test for FinFET memory functional fault detection", Proc. SPIE 12720, 2022 Workshop on Electronics Communication Engineering, 1272007 (28 June 2023); https://doi.org/10.1117/12.2668418
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KEYWORDS
Fin field effect transistors

Detection and tracking algorithms

Resistance

Logic

Manufacturing

Transistors

Algorithm testing

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