Applications of GaN HEMT: current state and future trends

Yufan Zhu

doi:10.1117/12.2690380

17 August 2023 Applications of GaN HEMT: current state and future trends

Yufan Zhu

Proceedings Volume 12757, 3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023); 127570G (2023) https://doi.org/10.1117/12.2690380
Event: 3rd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2023), 2023, Kunming, China

Abstract

With the continuous advancement of communication technology and the increasing popularity of new energy vehicles, the performance expectations of traditional first and second generation semiconductors are no longer being met. Therefore, current research has shifted towards third generation semiconductors, such as GaN, due to their unique material properties. GaN offers a higher electron saturation drift rate, more robust radiation resistance, and higher thermal conductivity. GaN HEMT, which is based on GaN, has attracted much attention in high power and high-frequency scenarios, owing to its higher breakdown voltage and electron mobility than traditional silicon-based semiconductor devices. This paper explores the current applications of GaN HEMT in DC-DC power converters for electric vehicles, as well as power amplifiers and low noise amplifiers for wireless communications. Additionally, the present application of GaN HEMT is critically assessed, and potential future development or improvement directions are discussed. Given its exceptional material properties and unique advantages, it is anticipated that GaN HEMT will continue to play a crucial part in the development of advanced semiconductor devices

Citation Download Citation

Yufan Zhu "Applications of GaN HEMT: current state and future trends", Proc. SPIE 12757, 3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023), 127570G (17 August 2023); https://doi.org/10.1117/12.2690380

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