Poster + Paper
28 November 2023 High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm
Author Affiliations +
Conference Poster
Abstract
High-power single-mode laser diodes around 795 nm are widely used in applications such as Rb atomic clocks and nuclear magnetic resonance imaging. We simulate a high-power single-mode semiconductor laser around 795 nm based on a supersymmetric structure. In the lateral direction, the mode stability characteristics are investigated by varying the three waveguides widths and the distances between the middle main waveguide and the two sub-waveguides. Since the left and right waveguides have different widths, the optimal distance from them to the main waveguide is also different. In order to ensure the single-mode operating of the laser, there is a pair of optimized distances from the left and right waveguides to the main waveguide. The distances from the left and right waveguides to the main waveguide are 1 μm and 1.2 μm, respectively, when the widths of the left waveguide, right waveguide and main waveguide are set as 2.3 μm, 3.5 μm and 6 μm, respectively. In the longitudinal direction, a laterally-coupled grating structure is used to achieve longitudinal mode selection. Such lasers are expected to be the next generation of high-power, narrow-linewidth, singlemode laser diodes.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Lichang Wang, Yufei Wang, Fengxin Dong, Mengna Li, Ting Fu, Xuyan Zhou, and Jianxin Zhang "High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm", Proc. SPIE 12765, Optical Design and Testing XIII, 127651X (28 November 2023); https://doi.org/10.1117/12.2688673
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

High power lasers

Semiconductor lasers

Modes of laser operation

Tolerancing

Atomic clocks

Laser processing

Back to Top