Miniband transport in GaAs-AlAs superlattices

Holger T. Grahn; Harald Schneider; Klaus von Klitzing; Klaus H. Ploog

doi:10.1117/12.20728

1 October 1990 Miniband transport in GaAs-AlAs superlattices

Holger T. Grahn, Harald Schneider, Klaus von Klitzing, Klaus H. Ploog

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20728
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We report on the investigation of the miniband transport regime in GaAs-AlAs superlattices by electrical time-of-flight experiments. The temperature dependence of the low-field drift mobility is used to obtain information about the underlying transport mechanisms. The photocurrent as a function of the applied field can be fitted over a wide temperature range with a modified Kazarinov-Suris model.

Citation Download Citation

Holger T. Grahn, Harald Schneider, Klaus von Klitzing, and Klaus H. Ploog "Miniband transport in GaAs-AlAs superlattices", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20728

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