Presentation + Paper
11 March 2024 Extended InGaAs PIN photodiode with improved linearity for FTIR spectroscopy
Author Affiliations +
Proceedings Volume 12893, Photonic Instrumentation Engineering XI; 128930K (2024) https://doi.org/10.1117/12.3003366
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In this paper we discuss the performance of a new generation of extended InGaAs photodetectors, the IG26H series, with a 2.6 μm wavelength cut off developed by the Laser Components Detector Group. These devices have a low leakage current over a wide range of applied reverse bias voltage and also have a high shunt resistance of 15 kOhms for 0 Volt bias applications. These photodetectors allow for the device operation up to 5 Volts reverse bias while maintaining low leakage of under 50 μAmp for a 1mm diameter active area detector thus assuring linearity of the operation of the detectors.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Arshey Patadia, Shankar Baliga, and Davorin Babic "Extended InGaAs PIN photodiode with improved linearity for FTIR spectroscopy", Proc. SPIE 12893, Photonic Instrumentation Engineering XI, 128930K (11 March 2024); https://doi.org/10.1117/12.3003366
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KEYWORDS
Sensors

Photodetectors

Indium gallium arsenide

Dark current

FT-IR spectroscopy

Resistance

Signal detection

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