Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

Derek C. S. Dumas; Conor Coughlan; Charlie Smith; Muhammad Mirza; Jaroslaw Kirdoda; Fiona Fleming; Charlie McCarthy; Hannah Mowbray; Xin Yi; Lisa Saalbach; Gerald S. Buller; Douglas J. Paul; Ross W. Millar

doi:10.1117/12.3001450

8 March 2024 Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

Derek C. S. Dumas, Conor Coughlan, Charlie Smith, Muhammad Mirza, Jaroslaw Kirdoda, Fiona Fleming, Charlie McCarthy, Hannah Mowbray, Xin Yi, Lisa Saalbach, Gerald S. Buller, Douglas J. Paul, Ross W. Millar

Author Affiliations +

Proceedings Volume 12895, Quantum Sensing and Nano Electronics and Photonics XX; 1289505 (2024) https://doi.org/10.1117/12.3001450
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we investigate the pseudo-planar design with simulation and experiment to establish the spatial contributions to the dark-count rate, which will ultimately facilitate optimisation towards operation at temperatures compatible with Peltier cooler technologies.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Derek C. S. Dumas, Conor Coughlan, Charlie Smith, Muhammad Mirza, Jaroslaw Kirdoda, Fiona Fleming, Charlie McCarthy, Hannah Mowbray, Xin Yi, Lisa Saalbach, Gerald S. Buller, Douglas J. Paul, and Ross W. Millar "Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes", Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 1289505 (8 March 2024); https://doi.org/10.1117/12.3001450

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