Programmable quantum emitter formation in silicon

K. Jhuria; V. Ivanov; D. Polley; W. Liu; A. Persaud; Y. Zhiyenbayev; W. Redjem; W. Qarony; P. Parajuli; Qing Ji; A. J. Gonsalves; J. Bokor; L. Z. Tan; B. Kanté; T. Schenkel

doi:10.1117/12.2692784

13 March 2024 Programmable quantum emitter formation in silicon

K. Jhuria, V. Ivanov, D. Polley, W. Liu, A. Persaud, Y. Zhiyenbayev, W. Redjem, W. Qarony, P. Parajuli, Qing Ji, A. J. Gonsalves, J. Bokor, L. Z. Tan, B. Kanté, T. Schenkel

Author Affiliations +

Proceedings Volume 12912, Quantum Sensing, Imaging, and Precision Metrology II; 129120P (2024) https://doi.org/10.1117/12.2692784
Event: SPIE Quantum West, 2024, San Francisco, California, United States

Abstract

Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.

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K. Jhuria, V. Ivanov, D. Polley, W. Liu, A. Persaud, Y. Zhiyenbayev, W. Redjem, W. Qarony, P. Parajuli, Qing Ji, A. J. Gonsalves, J. Bokor, L. Z. Tan, B. Kanté, and T. Schenkel "Programmable quantum emitter formation in silicon", Proc. SPIE 12912, Quantum Sensing, Imaging, and Precision Metrology II, 129120P (13 March 2024); https://doi.org/10.1117/12.2692784

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