|
Single crystal silicon mirrors were widely used in high-energy laser system, and the surface accuracy/quality seriously restricted the output of laser system. So, how to improve the manufacturing level of single crystal silicon mirrors was particularly important, especially the polishing level. This work focus ed on the manufacturing requirements of high-load-capacity single crystal silicon mirrors and conducted a detailed study on the evolution of surface accuracy, roughness and absorption in IBF process. For IBF technique, the incident electron voltage was set to 750 eV and the beam incident angle was set to zero degree. The optical surface profile data was obtained through sub-aperture stitching method. After IBF process, the surface accuracy PV of the single crystal silicon cylindrical mirror converged from the initial 469.280 nm to 101.173 nm, and the roughness RMS diminished from 0.626 nm to 0.506 nm, the surface accuracy and quality had been significantly improved. The weak absorption of the optical surface was detected by weak-absorption platform, and absorption results of the mirror increased to a certain extent, from the initial 0.473 ppm to 0.536. The results showed that IBF technique could effectively improve the surface accuracy/quality of single crystal silicon mirror, which was of great significance to improve the performance of high-energy laser system.
|
