Presentation + Paper
10 April 2024 Affordable optical proximity correction runtime for EUV curvilinear mask tape-out flow
Ping Digaum, Kazuto Kajiwara, Nobue Kosa, Ming-Chuan Yang, Ezequiel Vidal Russell, Jianhong Qiu, Omar Ndiaye, Nicolas Martin, Hesham Omar, Ehsan Kabiri Rahani, Peigen Cao, Michael Crouse
Author Affiliations +
Abstract
Extreme ultraviolet (EUV) technology enables further downscaling for logic and memory designs. This powerful technology comes with new challenges that must be controlled to unlock the novel technology accuracy and capabilities. Freeform (curvilinear) masks introduce a flexible tape-out capability that enables customers to realize EUV technology accuracy and capabilities on wafer. However, the accuracy enhancements of curvilinear masks do not come free of challenges. Source optimization, optical proximity correction (OPC) and verification runtime, mask proximity correction (MPC) runtime, data volume handling at fracture, and finally mask writing time are some of these challenges. In this paper, we present an affordable runtime tape-out flow for optical proximity correction and verification. This tapeout flow connects the capabilities of different engines to balance accuracy and mask turnaround time. Combining the benefits of rigorous solvers and pattern matching with affordable OPC, mask rule check (MRC) and verification capabilities cut down mask turnaround time from weeks to days, offering customers cutting edge technology on wafers with acceptable runtime. In this paper, we present a new flow for EUV freeform OPC with demonstrated runtime and accuracy benefits validated on wafer
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Ping Digaum, Kazuto Kajiwara, Nobue Kosa, Ming-Chuan Yang, Ezequiel Vidal Russell, Jianhong Qiu, Omar Ndiaye, Nicolas Martin, Hesham Omar, Ehsan Kabiri Rahani, Peigen Cao, and Michael Crouse "Affordable optical proximity correction runtime for EUV curvilinear mask tape-out flow", Proc. SPIE 12954, DTCO and Computational Patterning III, 129540T (10 April 2024); https://doi.org/10.1117/12.3009981
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KEYWORDS
Optical proximity correction

Extreme ultraviolet

Printing

Shadows

Source mask optimization

Industry

Lithography

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