Application of moiré method for defect detection and strain imaging of silicon single crystals

Qingcui Huang; Qinghua Wang; Xiaojun Yan

doi:10.1117/12.3023360

15 February 2024 Application of moiré method for defect detection and strain imaging of silicon single crystals

Qingcui Huang, Qinghua Wang, Xiaojun Yan

Proceedings Volume 13069, International Conference on Optical and Photonic Engineering (icOPEN 2023); 130690L (2024) https://doi.org/10.1117/12.3023360
Event: International Conference on Optical and Photonic Engineering (icOPEN 2023), 2023, Singapore, Singapore

Abstract

Defect detection is crucial to the manufacture and evaluation of materials. However, it is still a great challenge to detect the defects in a wide field. In this paper, the two-dimensional (2D) digital multiplication moiré method is presented. The point defects of the crystal are detected visually by employing digital image processing. We mainly discuss the applications of this method to detect the defect and measure the strain in the silicon (Si) single crystals. The strain distributions in the main directions of Si single crystals are measured, and the point defects are detected. Point defects are easier to observe when the atomic structure is amplified using 2D multiplication moiré. The 2D multiplication moiré method that has been used for the point defects detection in Si single crystals described in this paper also lays an important foundation for the detection of strains and defects in the crystal structure of other materials.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Qingcui Huang, Qinghua Wang, and Xiaojun Yan "Application of moiré method for defect detection and strain imaging of silicon single crystals", Proc. SPIE 13069, International Conference on Optical and Photonic Engineering (icOPEN 2023), 130690L (15 February 2024); https://doi.org/10.1117/12.3023360

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