Paper
30 April 2024 High conductivity multi-channel AlGaN/AlN/GaN heterostructure for underwater blue light detection
Author Affiliations +
Proceedings Volume 13153, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Technologies in Optical Systems; 1315306 (2024) https://doi.org/10.1117/12.3013635
Event: Sixth Conference on Frontiers in Optical Imaging Technology and Applications (FOI2023), 2023, Nanjing, JS, China
Abstract
AlGaN/GaN heterostructures is a promising wide-bandwidth semiconductor material for underwater blue light detection due to their unique physical properties. Nevertheless, due to the thin two-dimensional electron gas (2DEG) at the heterostructure interface, the contact resistance remains relatively high. To reduce the contact resistance and improve the potential of AlGaN/GaN heterostructures in high-power and high-frequency electronic devices, multi-channel AlGaN/GaN heterostructures were designed and manufactured in this research. The carrier distribution and distribution of Al, Ga and N elements in the multi-channel AlGaN/GaN heterostructures were characterized. Moreover, the effect of polarization charge on carrier distribution was analysed using energy band theory. The results indicate that multi-channel AlGaN/GaN heterostructures can effectively reduce the contact resistance of devices and that several parallel 2DEGs are present inside the device. The polarisation charge at the heterostructure interface results in an uneven carrier distribution in each channel region. This work is helpful for the application of AlGaN/GaN to underwater blue light detectors.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yuebo Liu, QiuLing Qiu, Zesheng Lv, and Honghui Liu "High conductivity multi-channel AlGaN/AlN/GaN heterostructure for underwater blue light detection", Proc. SPIE 13153, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Technologies in Optical Systems, 1315306 (30 April 2024); https://doi.org/10.1117/12.3013635
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Heterojunctions

Aluminum gallium nitride

Gallium nitride

Interfaces

Aluminum

Polarization

Barrier layers

Back to Top