Rise time and recovery of GaAs photoconductive semiconductor switches

Fred J. Zutavern; Guillermo M. Loubriel; Marty W. O'Malley; Dan L. McLaughlin; Wesley D. Helgeson

doi:10.1117/12.25062

1 March 1991 Rise time and recovery of GaAs photoconductive semiconductor switches

Fred J. Zutavern, Guillermo M. Loubriel, Marty W. O'Malley, Dan L. McLaughlin, Wesley D. Helgeson

Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25062
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States

Abstract

Fast rise time applications have encouraged us to look at the rise time dependences of lockon switching. Our tests have shown rise time and delay effects which decrease dramatically with increasing electric field across the switch and/or optical energy used in activating lockon. Interest in high repetition rate photoconductive semiconductor switches (PCSS) which require very little trigger energy (our 1 . 5cm long switches have been triggered with as little as 20 J) has also led us to investigate recovery from lock-on. Several circuits have been used to induce fast recovery the fastest being 30 ns. The most reliable circuit produced a 4-pulse burst of +/- 10-kY pulses at 7 MHz with lOO-jtJ trigger energy per pulse.

Citation Download Citation

Fred J. Zutavern, Guillermo M. Loubriel, Marty W. O'Malley, Dan L. McLaughlin, and Wesley D. Helgeson "Rise time and recovery of GaAs photoconductive semiconductor switches", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25062

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