Influence of sheath properties on the profile evolution in reactive ion etching processes

Andreas Fichelscher; Ivo W. Rangelow; Andreas Stamm

doi:10.1117/12.48904

1 March 1991 Influence of sheath properties on the profile evolution in reactive ion etching processes

Andreas Fichelscher, Ivo W. Rangelow, Andreas Stamm

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48904
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

The ion transport through the sheath as the process that primarily determines the energy and angular distributions of ions striking the substrate is simulated with Monte-Carlo methods. The effect of pressure on these distributions is known to be characterized by the proportion of mean free path to sheath thickness while the influence of frequency on the energy and angular distributions may be characterized by the proportion of the period of the applied voltage to the time the ion spents in the sheath. The even at high frequencies frequently observed double-peaked shape of the energy spectra is investigated and the dependence of the angular distribution on energy is shown to be contingent on the influence of collisions within the sheath. Finally the influence of the divergence of the ion stream represented by the ion angular distribution on the final profile evolution is demonstrated with the SPEED-Simulator (Simulation of profile evolution with etching and deposition)14.

Citation Download Citation

Andreas Fichelscher, Ivo W. Rangelow, and Andreas Stamm "Influence of sheath properties on the profile evolution in reactive ion etching processes", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48904

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