Paper
1 March 1991 SPEEDIE: a profile simulator for etching and deposition
James P. McVittie, Juan C. Rey, A. J. Bariya, M. M. IslamRaja, L. Y. Cheng, S. Ravi, Krishna C. Saraswat
Author Affiliations +
Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48908
Event: Processing Integration, 1990, Santa Clara, CA, United States
Abstract
SPEEDIE is a new physically based profile simulator for dry etching and LPCVD. It calculates angular and energy distributions of ions and fast neutrals using a Monte Carlo (MC) simulator for ion sheath transport. Fluxes at each point on the profile can be calculated using either MC or analytical methods which consider 3-D transport by molecular flow surface diffusion and adsorption/re-emission. Etch rates are determined using a choice of etch models while LPCVD uses a sticking coefficient model. A modified string algorithm which allows simultaneous etching and deposition is used to move the surface. Examples which match experiments are given for sloped oxide etching and oxide filling of trenches and vias.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James P. McVittie, Juan C. Rey, A. J. Bariya, M. M. IslamRaja, L. Y. Cheng, S. Ravi, and Krishna C. Saraswat "SPEEDIE: a profile simulator for etching and deposition", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48908
Lens.org Logo
CITATIONS
Cited by 30 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ions

Etching

Monte Carlo methods

Particles

Diffusion

Low pressure chemical vapor deposition

Integrated circuits

RELATED CONTENT

Deep discrete trenches filled by in situ doped polysilicon ...
Proceedings of SPIE (September 01 1999)
Etch tailoring through flexible end-point detection
Proceedings of SPIE (March 01 1991)
In situ auto ash a key to reducing process...
Proceedings of SPIE (February 01 1992)
Simulation of ion-enhanced dry-etch processes
Proceedings of SPIE (March 01 1991)

Back to Top