New photovoltaic effect in semiconductor junctions n+/p

E. Dominguez Ferrari; F. Encinas Sanz; Jose M. Guerra Perez

doi:10.1117/12.25962

1 February 1991 New photovoltaic effect in semiconductor junctions n+/p

E. Dominguez Ferrari, F. Encinas Sanz, Jose M. Guerra Perez

Proceedings Volume 1397, 8th Intl Symp on Gas Flow and Chemical Lasers; (1991) https://doi.org/10.1117/12.25962
Event: Eighth International Symposium on Gas-Flow and Chemical Lasers, 1990, Madrid, Spain

Abstract

The application of multiphotonic multistep absorption model to the 10,6 ?m wave lenght laser induced photovoltaic potentials in silicon junctions is discussed. First observations in Germanium junctions are reported.

Citation Download Citation

E. Dominguez Ferrari, F. Encinas Sanz, and Jose M. Guerra Perez "New photovoltaic effect in semiconductor junctions n+/p", Proc. SPIE 1397, 8th Intl Symp on Gas Flow and Chemical Lasers, (1 February 1991); https://doi.org/10.1117/12.25962

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