Modeling of illumination effects on resist profiles in x-ray lithography

Heinrich K. Oertel; M. Weiss; Hans L. Huber; Yuli Vladimirsky; Juan R. Maldonado

doi:10.1117/12.47361

1 August 1991 Modeling of illumination effects on resist profiles in x-ray lithography

Heinrich K. Oertel, M. Weiss, Hans L. Huber, Yuli Vladimirsky, Juan R. Maldonado

Proceedings Volume 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing; (1991) https://doi.org/10.1117/12.47361
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring x-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.

Citation Download Citation

Heinrich K. Oertel, M. Weiss, Hans L. Huber, Yuli Vladimirsky, and Juan R. Maldonado "Modeling of illumination effects on resist profiles in x-ray lithography", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47361

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