Ion implantation and diffusion for electrical junction formation in HgCdTe

Lucia O. Bubulac

doi:10.1117/12.46508

1 August 1991 Ion implantation and diffusion for electrical junction formation in HgCdTe

Lucia O. Bubulac

Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46508
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

Ion implantation in HgCdTe is a well-established approach for fabricating IR- sensitive photovoltaic devices with n-on-p type junctions. The technique typically uses ion implantation of light species (usually B) to form the n region by the diffusion of irradiation-induced defects, including Hg atoms, in the material doped by Hg-vacancy acceptors. Also, the approach to form electrical junctions by the classical technique of ion implantation for chemical doping followed by the diffusion and activation of the implanted species has been demonstrated. This paper focuses mainly on p-type extrinsic doping with As diffusion from an ion implanted source.

Citation Download Citation

Lucia O. Bubulac "Ion implantation and diffusion for electrical junction formation in HgCdTe", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46508

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