Paper
1 October 1991 Applications of the FEL to NLO spectroscopy of semiconductors
Carl R. Pidgeon
Author Affiliations +
Proceedings Volume 1501, Advanced Laser Concepts and Applications; (1991) https://doi.org/10.1117/12.46874
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands
Abstract
A short review is presented of some present and possible future applications of free electron lasers (FELs) to the study of nonlinear optical (NLO) properties of condensed matter in the infrared spectral region. Emphasis is put on semiconductors, and in particular GaAs and related III-V systems, and recent work on organic semiconductors. Suggestions are also given for experiments in Ge and narrow gap semiconductors such as InSb and HgCdTe. The desirable (or, in some cases, essential) properties of the FEL for the particular experiment are emphasized. The following topics are addressed: bandgap (single and multiphoton) resonant processes; photoionization kinetics of semiconductors; the FEL as probe for far infrared (FIR) gain measurement; FIR second harmonic generation and nonlinear optics. For convenience these are taken in spectral order from the near and mid-infrared (mainly linac-based FEL) to FIR (mainly Van de Graaff-based FEL) applications.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl R. Pidgeon "Applications of the FEL to NLO spectroscopy of semiconductors", Proc. SPIE 1501, Advanced Laser Concepts and Applications, (1 October 1991); https://doi.org/10.1117/12.46874
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KEYWORDS
Free electron lasers

Semiconductors

Far infrared

Nonlinear optics

Spectroscopy

Absorption

Mid-IR

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