AR layer properties for high-power laser prepared by neutral-solution processing

Fang Feng Wu; Kai Su

doi:10.1117/12.47210

1 November 1991 AR layer properties for high-power laser prepared by neutral-solution processing

Fang Feng Wu, Kai Su

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47210
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The AR layer prepared by chemical method is of renewed interest due to its higher laser damage threshold than that of AR film deposited by the vacuum evaporation method. The AR layer has been prepared on BK-7 glass substrate by neutral-solution processing in our laboratory and the results were reported in 1989. Recently, we improved the preparated condition that the transmittance increase from 99% at 1.06 micrometers and the laser damage threshold still remain about twice as the AR film prepared by vacuum evaporation method. The cross structure of the AR layer has been observed by TEM.

Citation Download Citation

Fang Feng Wu and Kai Su "AR layer properties for high-power laser prepared by neutral-solution processing", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47210

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