GaN single-crystal films on silicon substrates grown by MOVPE

Takao Nagatomo; Ichiro Ochiai; Shigeo Ookoshi; Osamu Omoto

doi:10.1117/12.47299

1 November 1991 GaN single-crystal films on silicon substrates grown by MOVPE

Takao Nagatomo, Ichiro Ochiai, Shigeo Ookoshi, Osamu Omoto

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47299
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Single crystal films GaN have been grown on (111) silicon substrates by metal organic vapor phase epitaxy (MOVPE) in an ambient hydrogen gas at atmospheric pressure. When the growth conditions of V/III ratio of 700, growth rate of about 4 micrometers /h and growth temperature from 850 to 940 degree(s)C were maintained, good-quality single crystal films were obtained. The crystal structure of the films is a hexagonal and the (0001) plane of GaN is preferentially oriented on (111) silicon substrates. The properties of the films have been studied by the reflection high energy electron diffraction (RHEED) technique, x-ray diffraction, scanning-electron microscope (SEM), electrical and optical measurements, and photoluminescence.

Citation Download Citation

Takao Nagatomo, Ichiro Ochiai, Shigeo Ookoshi, and Osamu Omoto "GaN single-crystal films on silicon substrates grown by MOVPE", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47299

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