High-quality heavily strained II-VI quantum well

Jie Li; Li He; Weiming Tang; W. Shan; Shixin Yuan

doi:10.1117/12.47198

1 November 1991 High-quality heavily strained II-VI quantum well

Jie Li, Li He, Weiming Tang, W. Shan, Shixin Yuan

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47198
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Atomic layer epitaxy technique was successfully applied to grow CdTe-ZnTe multilayers on (001) GaAs substrate. A structure of (CdTe)_m(ZnTe)_n-ZnTe multiquantum wells was proposed and prepared, and characterized by x-ray diffraction, photoluminescence, and modulation reflection spectroscope. The high crystalline quality is mainly due to the reduction of misfit dislocations.

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Jie Li, Li He, Weiming Tang, W. Shan, and Shixin Yuan "High-quality heavily strained II-VI quantum well", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47198

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