Optical transition characteristic energies of amorphous and polycrystalline tin oxide films

M. Rasat Muhamad; W. H. A. Majid; Z. Ariffin

doi:10.1117/12.47241

1 November 1991 Optical transition characteristic energies of amorphous and polycrystalline tin oxide films

M. Rasat Muhamad, W. H. A. Majid, Z. Ariffin

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47241
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Thin films of tin oxide were prepared by room temperature thermal evaporation of blue-black SnO crystal powder synthesized from metallic tin on glass substrate. X-ray diffractograms revealed that the amorphous samples form polycrystals of SnO when annealed at 300 degree(s)C in ambient air for 30 minutes and are oxidized to polycrystals of SnO₂ when further annealed at 500 degree(s)C or above. The 2(theta) of the x-ray diffractogram peaks were produced by (101), (110), (211), (200), (112) planes of SnO and (110), (101), (211), (200), (220) planes of SnO₂, respectively, as assigned by the ASTM index. Even though the optical energy gap of SnO (2.4 - 2.6 eV), is smaller compare to that of SnO₂ (3.0 - 3.2 eV), the average strength of optical transition is highest for SnO polycrystals with a magnitude of 14.0 eV as compared to 10.4 eV for SnO₂. The single oscillator strengths are 4.0 and 3.5 eV for polycrystalline SnO and SnO₂ respectively. The plasma frequency was determined to be in the range of (6.1 - 11.8) X 10¹⁵ Hz and increases with increasing composition of SnO₂; this parameter was used to estimate the density of valence electron in this material.

Citation Download Citation

M. Rasat Muhamad, W. H. A. Majid, and Z. Ariffin "Optical transition characteristic energies of amorphous and polycrystalline tin oxide films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47241

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