High-gain GaAs MSM photodetector

V. T. Karulkar; S. C. Purandare; Atul Kumar Srivastava; B. M. Arora

doi:10.1117/12.636986

16 December 1992 High-gain GaAs MSM photodetector

V. T. Karulkar, S. C. Purandare, Atul Kumar Srivastava, B. M. Arora

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636986
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

Photodetectors with metal-semiconductor -metal (MSM) structures having very high quan turn efficiency are investigated to identify the gain mechanism. From the temperature dependence studies impact ionisation of carriers in a region under the edge of the cathode is shown to be the predominant gain mechanism. Metal-Semiconductors-Metal (MSM) structure has recently emerged" 2 as an attractive device for photodetection due to its simple planar tech nology which can be easily adapted to optoelec tronic integration. The other features of MSM photodetector are their high sensitivity, low capacitance, low dark current and high speed. Substatial amount of work has been done on GaAs MSM photodiodes which are useful in near infrared wavelength regime. Devices with very low dark current (lOOpA at 1OV for 200x200pm geometry) and low rise and fall times (23 and 55 ps respecti vely) have been recently fabricated on semi-insu lating (SI) GaAs substrates1. The other interest ing feature of MSM structure is that it has in ternal gain. Despite intensive study of these devices there is still confusion about the physi cal origin of the gain in these devices. Ito et a13 attribute the gain to hole injection at the forward biased anode contact. Measurements of Zirngibl et al however, point to avalanche mechanism of gain in these devices. In this paper we report the results of experimental in vestigation of gain mechanism in GaAs MSM struc tures which have extremely high gain (100).

Citation Download Citation

V. T. Karulkar, S. C. Purandare, Atul Kumar Srivastava, and B. M. Arora "High-gain GaAs MSM photodetector", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636986

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available