Photoluminescence on InP: effect of surfaces and interfaces

T. K. Paul; D. N. Bose

doi:10.1117/12.636841

16 December 1992 Photoluminescence on InP: effect of surfaces and interfaces

T. K. Paul, D. N. Bose

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636841
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

It has been shown that improved surface properties of InP could be achieved through HF and sulfide NaS. 9HO) treatments. The photoluminescence (PL) intensity was found to increase due to reduction in interface state density after chemical treatments. X-ray photo-electron spectroscopy (XPS) studies revealed that the formation of IflF3 and P2S3 after HF and sulfide treatment respectively are responsible for better interfacial behaviour. I.

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T. K. Paul and D. N. Bose "Photoluminescence on InP: effect of surfaces and interfaces", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636841

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