Practicing the top antireflector process

Christopher F. Lyons; Robert K. Leidy; Gary B. Smith

doi:10.1117/12.130348

1 June 1992 Practicing the top antireflector process

Christopher F. Lyons, Robert K. Leidy, Gary B. Smith

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130348
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Thickness variations in photoresist caused by substrate topography, and normal variations in deposited thin films, arc unavoidable sources of linewidth variation in optical lithography. Thin film interference effects cause exposure to vary by large amounts. A new approach to controlling these effects is the use of a top antircficctor (TAR) film on top of the photoresist. In this paper, the performance of a process using a water soluble TAR material is described. Simulation and experimental results arc given which show the effectiveness in controlling wafer reflectivity, and exposure dose in the presence of varying insulator and resist films. The effect of the TAR process on focus and exposure latitude is examined and initial results from device manufacturing are presented.

Citation Download Citation

Christopher F. Lyons, Robert K. Leidy, and Gary B. Smith "Practicing the top antireflector process", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130348

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