Laser-assisted chemical vapor deposition of device-quality GaAs

John C. Roberts; H. Liu; Karim S. Boutros; J. Ramdani; Salah M. Bedair

doi:10.1117/12.137647

2 September 1992 Laser-assisted chemical vapor deposition of device-quality GaAs

John C. Roberts, H. Liu, Karim S. Boutros, J. Ramdani, Salah M. Bedair

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137647
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Selective area epitaxial growth of gallium arsenide by laser assisted chemical vapor deposition (LCVD) offers a promising approach to in situ device fabrication and integration. By scanning a focussed Ar ion laser beam across a thermally biased substrate in the presence of arsine and an organometallic source, GaAs is selectively deposited only on areas of the substrate exposed to the laser beam at substrate temperatures in the range of 300 - 400 degree(s)C. Laser assisted chemical vapor deposition of undoped and n-type doped device quality GaAs has been demonstrated. The laser-grown undoped GaAs films are highly resistive and exhibit 77 degree(s)K PL spectra with FWHMs of < 10 meV. N-type GaAs, using silane as a dopant source, has been deposited having controllable carrier concentrations ranging from 1 (DOT) 10¹⁷ - 7 (DOT) 10¹⁸ cm^-3 and room temperature mobilities between 600 - 5100 cm²/V(DOT)sec. GaAs MESFET structures have been selectively deposited using the LCVD growth technique. These devices have performance characteristics comparable to devices of similar dimensions grown by conventional techniques.

Citation Download Citation

John C. Roberts, H. Liu, Karim S. Boutros, J. Ramdani, and Salah M. Bedair "Laser-assisted chemical vapor deposition of device-quality GaAs", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137647

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