Processing of InP and related compounds at nanometer dimensions

Ilesanmi Adesida; Hung-Pin Chang; Donald J. Ballegeer; X. Liu; Stephen G. Bishop; Catherine Caneau; Rajaram J. Bhat

doi:10.1117/12.137663

2 September 1992 Processing of InP and related compounds at nanometer dimensions

Ilesanmi Adesida, Hung-Pin Chang, Donald J. Ballegeer, X. Liu, Stephen G. Bishop, Catherine Caneau, Rajaram J. Bhat

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137663
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Processes for the fabrication of nanometer-scale geometries in InP and related materials are discussed. Special emphasis is directed to pattern transfer using reactive ion etching in methane-hydrogen plasmas. Using these processes, 70 nm period gratings etched 900 nm deep in InP resulting in an aspect ratio of 25 is demonstrated. It is shown that these processes can be applied successfully to the fabrication of quantum wires in InP/InGaAs heterostructures. The high luminescence efficiency of these wires even at dimensions down to 40 nm shows that CH₄/H₂ reactive ion etching does not severely degrade the optical properties of quantum wires.

Citation Download Citation

Ilesanmi Adesida, Hung-Pin Chang, Donald J. Ballegeer, X. Liu, Stephen G. Bishop, Catherine Caneau, and Rajaram J. Bhat "Processing of InP and related compounds at nanometer dimensions", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137663

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