Kinetics and magnitude of integral flow of thermal radiation excited by laser beam in semiconductors and metal-semiconductor structures are measured. It is shown that such measurements allow one to control surface properties of a semiconductor, to determine a velocity of surface carriers recombination, to reveal near-surface macrodefects, to define the quality of metal-semiconductor interface, etc., and, in addition, to draw conclusions about the conditions and mechanisms for laser-stimulated processes of diffusion, defects creation, p-n junction formation, and other processes of laser modification of semiconductor structures.
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