Paper
21 January 1993 Multilayer thin-film design as far-ultraviolet quarterwave retarders
Jongmin Kim, Muamer Zukic, Douglas G. Torr, Michele Wilson McColgan
Author Affiliations +
Abstract
At short wavelengths, such as FUV, transparent, optically active materials are scarce. Reflection phase retardation by a multilayer thin film can be a good alternative in this wavelength region. We design a multilayer quarterwave retarder by calculating the electric fields at each boundary in the multilayer thin film. Using this method, we achieve designs of FUV multilayers which provide high, matched reflectances for both s- and p-polarization states, and at the same time a phase difference between these two states of nearly 90 deg. For example, a quarterwave retarder designed at the Lyman-alpha line (121.6 nm) has 81.05 percent reflectance for the s-polarization and 81.04 percent for the p-polarization state. The phase difference between these two polarization states is 90.07 deg. For convenience the retarders are designed for 45 deg angle of incidence, but our design approach can be used for any other angle of incidence. Aluminum and MgF2 are used as film materials and an opaque thick film of aluminum as the substrate.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jongmin Kim, Muamer Zukic, Douglas G. Torr, and Michele Wilson McColgan "Multilayer thin-film design as far-ultraviolet quarterwave retarders", Proc. SPIE 1742, Multilayer and Grazing Incidence X-Ray/EUV Optics for Astronomy and Projection Lithography, (21 January 1993); https://doi.org/10.1117/12.140574
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Cited by 7 scholarly publications.
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KEYWORDS
Aluminum

Multilayers

Reflectivity

Thin films

Magnesium fluoride

Polarization

Wave plates

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