Silicon for use as a transmissive material in the far IR

Charles R. Poznich; Jroy C. Richter

doi:10.1117/12.130792

14 December 1992 Silicon for use as a transmissive material in the far IR

Charles R. Poznich, Jroy C. Richter

Proceedings Volume 1760, Window and Dome Technologies and Materials III; (1992) https://doi.org/10.1117/12.130792
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

Silicon is used extensively as a transmissive optic in the mid infrared (IR) region of the spectrum. It has not been used in the far IR primarily due to an absorption band at about nine microns. This absorption is the result of both intrinsic lattice absorption and an impurity band absorption due to oxygen (O₂). The absorption can be minimized by reducing or eliminating the impurity band component. In this work we report results obtained from transmission scans for low oxygen 'O₂ Free' silicon. We compare these results with those obtained for typical Czochralski (CZ) silicon. Absorption coefficients are calculated from the transmission data. Tabular data and graphical representations of the data are shown in the eight to twelve micron region of the spectrum.

Citation Download Citation

Charles R. Poznich and Jroy C. Richter "Silicon for use as a transmissive material in the far IR", Proc. SPIE 1760, Window and Dome Technologies and Materials III, (14 December 1992); https://doi.org/10.1117/12.130792

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