Paper
15 November 1993 Development of a 1- to 1.7-um image intensifier tube using a Generation III configuration
Joseph P. Estrera, Steve Lambert, Keith T. Passmore, David L. Phillips, Stan M. Vernon, Robert Glosser, William E. Flynt, M. A. Rector
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Abstract
We present the development of a near infrared image intensifier tube based on a Generation III configuration. The photocathode driving this tube is based on a negative-electron-affinity (NEA) InGaAs design. The surface and crystalline quality of the InGaAs active layer for this device is characterized by x-ray diffraction (XRD), micro-Raman spectroscopy, energy dispersive x-rays (EDX), and Auger spectroscopy. Room temperature and 77 K photoluminescence (PL) and transmission measurements indicate the near infrared responsivity (1.2 - 1.7 micrometers ) of the InGaAs active layer. Reflection mode measurements of the photoresponse (PR) in an ultra high vacuum environment produced white light sensitivities of 100 (mu) A/lumen and quantum efficiencies of approximately 1% for wavelengths of 1300 - 1600 nm at 300 K. Sealed image tubes were created, and early sealed tube results show low quantum efficiencies (approximately 0.1% 1550 nm) due to nonoptimized active layer thickness.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph P. Estrera, Steve Lambert, Keith T. Passmore, David L. Phillips, Stan M. Vernon, Robert Glosser, William E. Flynt, and M. A. Rector "Development of a 1- to 1.7-um image intensifier tube using a Generation III configuration", Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); https://doi.org/10.1117/12.161402
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KEYWORDS
Indium gallium arsenide

Quantum efficiency

Crystals

Image intensifiers

Gallium arsenide

Near infrared

Micro raman spectroscopy

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