Laser-thermal diagnostics of multilayer opto- and microelectronic structures

Sergey V. Svechnikov; Leonid L. Fedorenko; E. B. Kaganovich; V. P. Plahkotny; S. V. Baranetz; V. A. Antonov

doi:10.1117/12.191987

31 October 1994 Laser-thermal diagnostics of multilayer opto- and microelectronic structures

Sergey V. Svechnikov, Leonid L. Fedorenko, E. B. Kaganovich, V. P. Plahkotny, S. V. Baranetz, V. A. Antonov

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191987
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

Magnitude and kinetics of laser induced integral flow of thermal radiation of semiconductors and metal-semiconductor structures are studied. The possibilities of latent defect disclosure in metal-semiconductor structures, near-surface macrodefects in semiconductor wafers, to control surface properties of a semiconductor and metal-semiconductor interface with the help of developing the laser-thermal method of diagnostics have been shown. It is shown also that measurements of integral flow of thermal radiation allow us to draw conclusions about the condition and mechanisms for laser-stimulated diffusion, defects creation, p-n junction, and ohmical contact formation processes in semiconductor structures.

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Sergey V. Svechnikov, Leonid L. Fedorenko, E. B. Kaganovich, V. P. Plahkotny, S. V. Baranetz, and V. A. Antonov "Laser-thermal diagnostics of multilayer opto- and microelectronic structures", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191987

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