Paper
31 October 1994 Piezo-optic diagnostic of elastic tension and identification of defect types in CdTe by examination of exciton-defect complexes
B. E. Pesetsky, G. A. Shepelskii, M. V. Strikha, N. I. Tarbaev
Author Affiliations +
Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191980
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
It has been shown the evidence for the energy location of low-temperature photoluminescence (PL) of bound exciton complexes lines can be used as a technique of internal stress diagnostic in high quality bulk CdTe the substrates material for epitaxial growth photosensitive HgCdTe layers. The obtained deformation dependencies of the energy location and PL lines intensities allow us to estimate the value and sign of elastic stresses as well as defects type.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. E. Pesetsky, G. A. Shepelskii, M. V. Strikha, and N. I. Tarbaev "Piezo-optic diagnostic of elastic tension and identification of defect types in CdTe by examination of exciton-defect complexes", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191980
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KEYWORDS
Luminescence

Excitons

Crystals

Diagnostics

Semiconductors

Helium

Gallium arsenide

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