Paper
25 May 1994 Investigation of RF-excited Xe laser
ZhiGuo Lu, Zhao-hui Wang, David A. Andrews, Terence A. King
Author Affiliations +
Abstract
In the previous reports, investigations of DC discharge, pulsed discharge were described and RF discharge pumped frequency of Xenon laser is about 20MHz-30MHz. In this paper we report more high frequency pumping laser 3.508µ radiation in neutral Xenon using a transversely excited pure Xenon and helium-Xenon discharge. The discharge constructure is 1). the glass discharge tube is put in the stripline and 2). the matel parallel electrodes is made discharge tube. The discharge is excited traveling wave with 200MHz-1000MHz. The result of experiment indicate that satisfactory frequency is 200MHz-460MHz for glass discharge tube and about 640MHz for matel parallel electrodes. We also observed that product of pressure with input power as maximum output laser power is constant and relative efficiency no charge for pure Xe lasers in matel parallel electrodes. We had measured 9923 angstrom spontaneous radiation by OMA-III as the frequency of excited discharge is changed. Since the transitions originates on the lower laser level. It's intensity relates to laser radiation.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
ZhiGuo Lu, Zhao-hui Wang, David A. Andrews, and Terence A. King "Investigation of RF-excited Xe laser", Proc. SPIE 2118, Gas, Metal Vapor, and Free-Electron Lasers and Applications, (25 May 1994); https://doi.org/10.1117/12.176658
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KEYWORDS
Xenon

Electrodes

Glasses

Ionization

Laser stabilization

Plasma

Optical pumping

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